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X1G005591029700愛普生有源晶振型號(hào)SG-8018CE25.000000MHz TJHSA

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X1G005591029700愛普生有源晶振型號(hào)SG-8018CE25.000000MHz TJHSA

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瀏覽：- 發(fā)布日期：2022-09-05 16:04:24【大中小】

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X1G005591029700愛普生有源晶振型號(hào)SG-8018CE25.000000MHz TJHSA

有源晶振選型標(biāo)準(zhǔn)：

推薦愛普生SG-8018CE為例說明有源晶振選型步驟：

1：選擇外形和尺寸,找到對應(yīng)的愛普生晶振系列號(hào)(3225→SG-8018CE)

2：選擇頻點(diǎn)(25MHz→25.000000MHz)

3：選擇工作電壓(1.62 to 3.63 V→T)

4：選擇精度(±50ppm→J)

5：選擇溫度范圍(-40~+105℃→H)

6：第一引腳輸出待機(jī)ST(→S)

以上選定的參數(shù)為：SG-8018CE/25MHz/±50PPM/1.62 to 3.63 V/-40~+105℃,對應(yīng)愛普生標(biāo)準(zhǔn)料號(hào)是X1G005591029700

型號(hào)是SG-8018CE25.000000MHz TJHSA

X1G005591029700愛普生有源晶振,SG-8018CE25.000000MHz TJHSA石英晶體振蕩器

愛普生有源晶振編碼	型號(hào)	頻率	長X寬X高	輸出波	電源電壓	工作溫度	頻差	最大值
X1G005591022400	SG-8018CE	25.175000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591022500	SG-8018CE	12.352000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591022600	SG-8018CE	20.480000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591022700	SG-8018CE	21.333000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591022800	SG-8018CE	44.236000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591022900	SG-8018CE	100.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.9 mA
X1G005591023000	SG-8018CE	27.120000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591023100	SG-8018CE	30.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591029700	SG-8018CE	25.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591023400	SG-8018CE	12.500000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591023500	SG-8018CE	38.200000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591023600	SG-8018CE	16.670000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591023700	SG-8018CE	37.125000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591023800	SG-8018CE	20.480000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591023900	SG-8018CE	6.750000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591024000	SG-8018CE	24.000000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591024100	SG-8018CE	33.333000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591024200	SG-8018CE	24.545454 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 4.4 mA
X1G005591024300	SG-8018CE	16.500000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591024400	SG-8018CE	3.579545 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591024500	SG-8018CE	76.500000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.9 mA
X1G005591024600	SG-8018CE	19.800000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591024700	SG-8018CE	1.024000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591024800	SG-8018CE	14.318000 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591024900	SG-8018CE	4.915200 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 3.5 mA
X1G005591025000	SG-8018CE	66.666660 MHz	3.20 x 2.50 x 1.20 mm	CMOS	1.620 to 3.630 V	-40 to 105 °C	+/-50 ppm	≤ 5.2 mA