Silicon晶體振蕩器\530EC156M250DG\Si530歐美晶體\6G無(wú)線(xiàn)網(wǎng)絡(luò)晶振，尺寸7.00mmx5.00mm，頻率156.25MHZ，支持輸出LVPECL，XO時(shí)鐘振蕩器（標(biāo)準(zhǔn)），電壓 2.5V，腳位6-SMD，六腳貼片晶振，有源晶振，有源貼片晶振，LVPECL輸出晶振，差分晶振LV-PECL，貼片差分晶振，差分晶體振蕩器，低電壓差分晶振，低功耗差分晶振，低相位差分晶振，低抖動(dòng)差分晶振，網(wǎng)絡(luò)應(yīng)用差分晶振，高清視頻差分晶振，測(cè)試測(cè)量專(zhuān)用差分晶振，具有低抖動(dòng)低電壓的特點(diǎn)，產(chǎn)品十分適合用于SONET/SDH，網(wǎng)絡(luò) 標(biāo)清/高清視頻，測(cè)試和測(cè)量，時(shí)鐘和數(shù)據(jù)恢復(fù)，F(xiàn)PGA/ASIC時(shí)鐘生成等領(lǐng)域。
基于Si530/531 IC的XO有源晶體振蕩器可在工廠(chǎng)進(jìn)行配置對(duì)于包括頻率、電源電壓、電源電壓等的各種各樣的用戶(hù)規(guī)范，輸出格式和溫度穩(wěn)定性。具體配置為出廠(chǎng)配置在裝運(yùn)時(shí)進(jìn)行編程，從而消除長(zhǎng)交付周期與定制振蕩器相關(guān)。Silicon晶體振蕩器\530EC156M250DG\Si530歐美晶體\6G無(wú)線(xiàn)網(wǎng)絡(luò)晶振.
Silicon晶體振蕩器\530EC156M250DG\Si530歐美晶體\6G無(wú)線(xiàn)網(wǎng)絡(luò)晶振參數(shù)表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Supply Voltage1 | VDD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | ||||||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
— — — — |
111 99 90 81 |
121 108 98 88 |
mA | ||||||||||||||||||
| Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x VDD | — | — | V | |||||||||||||||||||
| VIL | — | — | 0.5 | V | ||||||||||||||||||||
| Operating Temperature Range | TA | –40 | — | 85 | ºC | |||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Nominal Frequency1,2 | fO | LVPECL/LVDS/CML | 10 | — | 945 | MHz | ||||||||||||||||||
| CMOS | 10 | — | 160 | MHz | ||||||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||||
| Temperature Stability1,3 |
–7 –20 –50 |
— |
+7 +20 +50 |
ppm | ||||||||||||||||||||
| Aging | fa | Frequency drift over first year | — | — | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Total Stability | Temp stability = ±7 ppm | — | — | ±20 | ppm | |||||||||||||||||||
| Temp stability = ±20 ppm | — | — | ±31.5 | ppm | ||||||||||||||||||||
| Temp stability = ±50 ppm | ±61.5 | ppm | ||||||||||||||||||||||
| Powerup Time4 | tOSC | 10 | ms | |||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| LVPECL Output Option1 | VO | mid-level | VDD– 1.42 | — | VDD– 1.25 | V | ||||||||||||||||||
| VOD | swing (diff) | 1.1 | — | 1.9 | VPP | |||||||||||||||||||
| VSE | swing (single-ended) | 0.55 | — | 0.95 | VPP | |||||||||||||||||||
| LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | ||||||||||||||||||
| VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | |||||||||||||||||||
| CML Output Option2 | VO | 2.5/3.3 V option mid-level | VDD– 1.30 | V | ||||||||||||||||||||
| 1.8 V option mid-level | VDD– 0.36 | V | ||||||||||||||||||||||
| VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | |||||||||||||||||||
| 1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | ||||||||||||||||||||
| CMOS Output Option3 | VOH | IOH= 32 mA | 0.8 x VDD | VDD | V | |||||||||||||||||||
| VOL | IOL= 32 mA | 0.4 | V | |||||||||||||||||||||
| Rise/Fall time (20/80%) | tR,tF | LVPECL/LVDS/CML | 350 | ps | ||||||||||||||||||||
| CMOS with CL= 15 pF | 1 | ns | ||||||||||||||||||||||
| Symmetry (duty cycle) | SYM |
LVPECL: (diff) LVDS: CMOS: |
VDD– 1.3 V 1.25 V (diff) VDD/2 |
45 | 55 | % | ||||||||||||||||||
Silicon晶體振蕩器\530EC156M250DG\Si530歐美晶體\6G無(wú)線(xiàn)網(wǎng)絡(luò)晶振 尺寸圖
OSC晶振產(chǎn)品特性：
可用于任何速率的輸出
頻率從10兆赫到945兆赫
并選擇1.4 GHz的頻率
集成superior的第三代DSPLL 抖動(dòng)性能
頻率穩(wěn)定性比高3倍
基于SAW的振蕩器
內(nèi)部固定晶振頻率
確保高可靠性和低老化
可用的CMOS、LVPECL、 LVDS和CML輸出 3.3、2.5和1.8 V電源選項(xiàng)
行業(yè)標(biāo)準(zhǔn)5 x 7毫米
封裝和引腳排列
無(wú)鉛/符合RoHS標(biāo)準(zhǔn)
更多相關(guān)美國(guó)Silicon晶振型號(hào)
歐美晶振原廠(chǎng)代碼
Manufacturer品牌
Series型號(hào)
Frequency 頻率
Voltage - Supply電壓
Frequency Stability頻率穩(wěn)定度
531EC155M520DG
Silicon振蕩器
Si531
155.52MHz
2.5V
±7ppm
530EC187M500DG
Silicon振蕩器
Si530
187.5MHz
2.5V
±7ppm
531AC187M500DG
Silicon振蕩器
Si531
187.5MHz
3.3V
±7ppm
531EC187M500DG
Silicon振蕩器
Si531
187.5MHz
2.5V
±7ppm
530AC000110DG
Silicon振蕩器
Si530
148.35165MHz
3.3V
±7ppm
530AC148M500DG
Silicon振蕩器
Si530
148.5MHz
3.3V
±7ppm
530EC000110DG
Silicon振蕩器
Si530
148.35165MHz
2.5V
±7ppm
530FC000110DG
Silicon振蕩器
Si530
148.35165MHz
2.5V
±7ppm
531EC000110DG
Silicon振蕩器
Si531
148.35165MHz
2.5V
±7ppm
531EC148M500DG
Silicon振蕩器
Si531
148.5MHz
2.5V
±7ppm
530BC155M520DG
Silicon振蕩器
Si530
155.52MHz
3.3V
±7ppm
530EC156M250DG
Silicon振蕩器
Si530
156.25MHz
2.5V
±7ppm
530AC187M500DG
Silicon振蕩器
Si530
187.5MHz
3.3V
±7ppm
530BC187M500DG
Silicon振蕩器
Si530
187.5MHz
3.3V
±7ppm
530FC187M500DG
Silicon振蕩器
Si530
187.5MHz
2.5V
±7ppm
530EC148M500DG
Silicon振蕩器
Si530
148.5MHz
2.5V
±7ppm
530EC200M000DG
Silicon振蕩器
Si530
200MHz
2.5V
±7ppm
531FC155M520DG
Silicon振蕩器
Si531
155.52MHz
2.5V
±7ppm
531EC156M250DG
Silicon振蕩器
Si531
156.25MHz
2.5V
±7ppm
530FC155M520DG
Silicon振蕩器
Si530
155.52MHz
2.5V
±7ppm
530BC000110DG
Silicon振蕩器
Si530
148.35165MHz
3.3V
±7ppm
530FC148M500DG
Silicon振蕩器
Si530
148.5MHz
2.5V
±7ppm
536AB125M000DG
Silicon振蕩器
Si536
125MHz
3.3V
±20ppm
535EB125M000DG
Silicon振蕩器
Si535
125MHz
2.5V
±20ppm
536EB125M000DG
Silicon振蕩器
Si536
125MHz
2.5V
±20ppm
535BB125M000DG
Silicon振蕩器
Si535
125MHz
3.3V
±20ppm
535BB156M250DG
Silicon振蕩器
Si535
156.25MHz
3.3V
±20ppm
535FB156M250DG
Silicon振蕩器
Si535
156.25MHz
2.5V
±20ppm
530EC312M500DG
Silicon振蕩器
Si530
312.5MHz
2.5V
±7ppm
530BC250M000DG
Silicon晶振
Si530
250MHz
3.3V
±7ppm
530EC311M040DG
Silicon振蕩器
Si530
311.04MHz
2.5V
±7ppm
530FC311M040DG
Silicon振蕩器
Si530
311.04MHz
2.5V
±7ppm
530FC622M080DG
Silicon振蕩器
Si530
622.08MHz
2.5V
±7ppm
531AC311M040DG
Silicon振蕩器
Si531
311.04MHz
3.3V
±7ppm
531BC311M040DG
Silicon振蕩器
Si531
311.04MHz
3.3V
±7ppm
531EC311M040DG
Silicon振蕩器
Si531
311.04MHz
2.5V
±7ppm
531EC622M080DG
Silicon振蕩器
Si531
622.08MHz
2.5V
±7ppm
531FC622M080DG
Silicon振蕩器
Si531
622.08MHz
2.5V
±7ppm
531FC311M040DG
Silicon振蕩器
Si531
311.04MHz
2.5V
±7ppm
530BC311M040DG
Silicon振蕩器
Si530
311.04MHz
3.3V
±7ppm
531BC622M080DG
Silicon振蕩器
Si531
622.08MHz
3.3V
±7ppm
531FC312M500DG
Silicon振蕩器
Si531
312.5MHz
2.5V
±7ppm
530EC622M080DG
Silicon振蕩器
Si530
622.08MHz
2.5V
±7ppm
531EC312M500DG
Silicon振蕩器
Si531
312.5MHz
2.5V
±7ppm
530BC622M080DG
Silicon振蕩器
Si530
622.08MHz
3.3V
±7ppm
531AC250M000DG
Silicon振蕩器
Si531
250MHz
3.3V
±7ppm
530AC311M040DG
Silicon振蕩器
Si530
311.04MHz
3.3V
±7ppm
530FC312M500DG
Silicon振蕩器
Si530
312.5MHz
2.5V
±7ppm
531EC250M000DG
Silicon振蕩器
Si531
250MHz
2.5V
±7ppm
530AC312M500DG
Silicon振蕩器
Si530
312.5MHz
3.3V
±7ppm
530EC250M000DG
Silicon振蕩器
Si530
250MHz
2.5V
±7ppm
530AC250M000DG
Silicon振蕩器
Si530
250MHz
3.3V
±7ppm
530FC250M000DG
Silicon振蕩器
Si530
250MHz
2.5V
±7ppm
530BC312M500DG
Silicon振蕩器
Si530
312.5MHz
3.3V
±7ppm
531BC312M500DG
Silicon振蕩器
Si531
312.5MHz
3.3V
±7ppm
530FC50M0000DG
Silicon振蕩器
Si530
50MHz
2.5V
±7ppm
535AB125M000DG
Silicon振蕩器
Si535
125MHz
3.3V
±20ppm
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