86-0755-27838351
康華爾電子成立至今已有20多年,是國內數一數二的晶振廠家0755-27838351,專業研發生產銷售石英晶振,32.768K晶振,石英晶體諧振器,貼片晶振,SAW濾波器等.采用無鉛環保材料生產,具有精度穩定,小體積,重量輕等特點.國產晶振就選康華爾電子,質量好,精度高,價格優勢.
康華爾電子多年來在競爭激烈的市場中,以技術占領市場,以質量贏得客戶,是國內口碑極高的晶振供應商.并且憑借自身的努力代理臺灣進口晶振多個品牌,TXC晶振,鴻星晶振,加高晶振,亞陶晶振等.康華爾電子所提供的臺產晶振,均符合德國ROHS環保指令,具有高質量,高可靠使用特性,咨詢選購熱線0755-27838351.
日本進口晶振在國內口碑一流,高端智能產品使用晶振大都會選擇日產晶振作為首選.康華爾電子憑借自身的努力同時代理KDS晶振,愛普生晶振,精工晶體,京瓷晶振等品牌.所代理石英晶振,石英晶體振蕩器,貼片晶體均符合歐盟ROHS環保要求,具有高精度,高品質,低插損,耐高溫等特點.
康華爾電子是國內優秀的歐美進口晶振供貨商0755-27838351,多年來憑借自身的努力,獲得CTS晶振,FOX晶振,Sitime晶振,瑞康晶振等代理權限.所代理進口晶振,歐美晶振均符合歐盟ROHS環保指令,并且獲得ISO國際質量管理體系認證.市場常用進口晶振封裝型號康華爾電子均有備貨,可免費提供現貨樣品以及晶振技術解決方案.
32.768K是晶振頻率中最容易讓人記住的數字,32.768K晶振素來有時鐘晶振的稱謂,只要跟數字顯示以及時間相關的產品都少不了一款32.768K晶振.根據不同的產品需求主要分為圓柱晶振和32.768K貼片晶振.常見封裝有2x6,3x8,7.0x1.5,3.2x1.5,2.0x1.2等體積.康華爾電子提供各種32.768K晶振,音叉表晶,價格優質,咨詢熱線0755-27838351.
有源晶振是一款自身帶有電源電壓功能的石英晶體振蕩器,并且有多種電壓供選擇,比如有1.8V,2.5V,3.3V,3.8V,5V等高速自動安裝和高溫回流焊設計,Optionable待機輸出三態輸出功能,電源電壓范圍：1.8V~5 V,高穩定性,低抖動,低功耗,主要應用領域:無線通訊,高端智能手機,平板筆記本WLAN,藍牙,數碼相機,DSL和其他IT產品的晶振應用,三態功能,PC和LCDM等高端數碼領域,符合RoHS/無鉛.
頻率：156.25MHZ
尺寸：7.0×5.0mm
Si531,531EC156M250DGR,7050mm,Silicon晶體振蕩器,156.25MHZ，尺寸7.0×5.0mm，頻率156.25MHZ，歐美進口晶振，有源晶體振蕩器，XO時鐘振蕩器，Silicon小體積振蕩器，7050mm有源晶振，OSC振蕩器，六腳有源晶振，SMD振蕩器，有源貼片振蕩器，低電壓有源晶振，低功耗有源晶振，低耗能有源晶振，低相位有源晶振，網絡設備有源晶振，數字視頻有源晶振，測試測量有源晶振，數據恢復有源晶振，通信設備又晶振，具有低電壓低相位的特點。
Si530/531 XO采用Skyworks Solutions的先進DSPLL®電路以提供高頻率的低抖動時鐘。Si530/531可用具有從10到945MHz的任意速率輸出頻率，并選擇頻率到1400兆赫。與傳統XO時鐘晶體振蕩器不同，傳統XO需要不同的晶體每個輸出頻率，Si530/531使用一個固定晶體來提供寬范圍的輸出頻率。產品常用于SONET/SDH。網絡。SSD/HD視頻。測試和測量，時鐘和數據恢復，FFPGA/ASIC時鐘生成等應用.Si531,531EC156M250DGR,7050mm,Silicon晶體振蕩器,156.25MHZ.
Si531,531EC156M250DGR,7050mm,Silicon晶體振蕩器,156.25MHZ，尺寸7.0×5.0mm，頻率156.25MHZ，歐美進口晶振，有源晶體振蕩器，XO時鐘振蕩器，Silicon小體積振蕩器，7050mm有源晶振，OSC振蕩器，六腳有源晶振，SMD振蕩器，有源貼片振蕩器，低電壓有源晶振，低功耗有源晶振，低耗能有源晶振，低相位有源晶振，網絡設備有源晶振，數字視頻有源晶振，測試測量有源晶振，數據恢復有源晶振，通信設備又晶振，具有低電壓低相位的特點。
Si530/531 XO采用Skyworks Solutions的先進DSPLL®電路以提供高頻率的低抖動時鐘。Si530/531可用具有從10到945MHz的任意速率輸出頻率，并選擇頻率到1400兆赫。與傳統XO時鐘晶體振蕩器不同，傳統XO需要不同的晶體每個輸出頻率，Si530/531使用一個固定晶體來提供寬范圍的輸出頻率。產品常用于SONET/SDH。網絡。SSD/HD視頻。測試和測量，時鐘和數據恢復，FFPGA/ASIC時鐘生成等應用.Si531,531EC156M250DGR,7050mm,Silicon晶體振蕩器,156.25MHZ.
Si531,531EC156M250DGR,7050mm,Silicon晶體振蕩器,156.25MHZ 參數表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Supply Voltage1 | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | ||||||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
— — — — |
111 99 90 81 |
121 108 98 88 |
mA | ||||||||||||||||||
| Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x V DD | — | — | V | |||||||||||||||||||
| VIL | — | — | 0.5 | V | ||||||||||||||||||||
| Operating Temperature Range | TA | –40 | — | 85 | ºC | |||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Nominal Frequency1,2 | fO | LVPECL/LVDS/CML |
|
156.25 |
|
MHz | ||||||||||||||||||
| CMOS | 10 | — | 160 | MHz | ||||||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||||
| Temperature Stability1,3 |
–7 –20 –50 |
— |
+7 +20 +50 |
ppm | ||||||||||||||||||||
| Aging | fa | Frequency drift over first year | — | — | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| Total Stability | Temp stability = ±7 ppm | — | — | ±20 | ppm | |||||||||||||||||||
| Temp stability = ±20 ppm | — | — | ±31.5 | ppm | ||||||||||||||||||||
| Temp stability = ±50 ppm | ±61.5 | ppm | ||||||||||||||||||||||
| Powerup Time4 | tOSC | 10 | ms | |||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||||
| LVPECL Output Option1 | VO | mid-level | V DD – 1.42 | — | V DD – 1.25 | V | ||||||||||||||||||
| VOD | swing (diff) | 1.1 | — | 1.9 | VPP | |||||||||||||||||||
| VSE | swing (single-ended) | 0.55 | — | 0.95 | VPP | |||||||||||||||||||
| LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | ||||||||||||||||||
| VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | |||||||||||||||||||
| CML Output Option2 | VO | 2.5/3.3 V option mid-level | V DD – 1.30 | V | ||||||||||||||||||||
| 1.8 V option mid-level | V DD – 0.36 | V | ||||||||||||||||||||||
| VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | |||||||||||||||||||
| 1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | ||||||||||||||||||||
| CMOS Output Option3 | V OH | I OH= 32 mA | 0.8 x V DD | V DD | V | |||||||||||||||||||
| VOL | I OL= 32 mA | 0.4 | V | |||||||||||||||||||||
| Rise/Fall time (20/80%) | tR,t F | LVPECL/LVDS/CML | 350 | ps | ||||||||||||||||||||
| CMOS with CL= 15 pF | 1 | ns | ||||||||||||||||||||||
| Symmetry (duty cycle) | SYM |
LVPECL: (diff) LVDS: CMOS: |
V DD – 1.3 V 1.25 V (diff) V DD/2 |
45 | 55 | % | ||||||||||||||||||
Si531,531EC156M250DGR,7050mm,Silicon晶體振蕩器,156.25MHZ 尺寸圖
Si531,531EC156M250DGR,7050mm,Silicon晶體振蕩器,156.25MHZ
OscillatorCrystal產品特點：
可用于任何速率輸出
頻率從10MHz到945MHz
并選擇1.4 GHz的頻率
具有卓越性能的第三代DSPLL®抖動性能
頻率穩定性是SAW振蕩器
內部固定晶體頻率
確保高可靠性和低成本變老
可用的CMOS、LVPECL、LVDS和CML輸出
3.3、2.5和1.8V電源選項
行業標準5 x 7mm
包裝和引腳
無鉛/符合RoHS
| Manufacturer Part Number原廠代碼 | Manufacturer品牌 | Series型號 | Frequency 頻率 | Voltage - Supply電壓 | Frequency Stability頻率穩定度 |
| 530CA28M6000DG | Silicon振蕩器 | Si530 | 28.6MHz | 3.3V | ±50ppm |
| 530AC125M000DGR | Silicon振蕩器 | Si530 | 125MHz | 3.3V | ±7ppm |
| 530BC125M000DGR | Silicon振蕩器 | Si530 | 125MHz | 3.3V | ±7ppm |
| 530EC125M000DGR | Silicon振蕩器 | Si530 | 125MHz | 2.5V | ±7ppm |
| 531AC125M000DGR | Silicon振蕩器 | Si531 | 125MHz | 3.3V | ±7ppm |
| 531BC125M000DGR | Silicon振蕩器 | Si531 | 125MHz | 3.3V | ±7ppm |
| 531EC125M000DGR | Silicon振蕩器 | Si531 | 125MHz | 2.5V | ±7ppm |
| 531FC125M000DGR | Silicon振蕩器 | Si531 | 125MHz | 2.5V | ±7ppm |
| 530AC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 3.3V | ±7ppm |
| 530BC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 3.3V | ±7ppm |
| 530EC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 2.5V | ±7ppm |
| 530FC106M250DGR | Silicon振蕩器 | Si530 | 106.25MHz | 2.5V | ±7ppm |
| 531AC106M250DGR | Silicon振蕩器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
| 531BC106M250DGR | Silicon振蕩器 | Si531 | 106.25MHz | 3.3V | ±7ppm |
| 531EC106M250DGR | Silicon振蕩器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
| 531FC106M250DGR | Silicon振蕩器 | Si531 | 106.25MHz | 2.5V | ±7ppm |
| 531FC25M0000DGR | Silicon振蕩器 | Si531 | 25MHz | 2.5V | ±7ppm |
| 530BC25M0000DGR | Silicon振蕩器 | Si530 | 25MHz | 3.3V | ±7ppm |
| 514GBB000118AAG | Silicon振蕩器 | Si514 | 156.25MHz | 2.5V | ±25ppm |
| 530RB150M000DG | Silicon振蕩器 | Si530 | 150MHz | 2.5V | ±20ppm |
| 530RB200M000DG | Silicon振蕩器 | Si530 | 200MHz | 2.5V | ±20ppm |
| 530BC100M000DG | Silicon振蕩器 | Si530 | 100MHz | 3.3V | ±20ppm |
| 530AC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 530AC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 3.3V | ±7ppm |
| 530BC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 530BC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 3.3V | ±7ppm |
| 530EC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 2.5V | ±7ppm |
| 530EC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 2.5V | ±7ppm |
| 530FC155M520DGR | Silicon振蕩器 | Si530 | 155.52MHz | 2.5V | ±7ppm |
| 530FC156M250DGR | Silicon振蕩器 | Si530 | 156.25MHz | 2.5V | ±7ppm |
| 531AC155M520DGR | Silicon振蕩器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 531AC156M250DGR | Silicon振蕩器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531BC155M520DGR | Silicon振蕩器 | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 531BC156M250DGR | Silicon振蕩器 | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531EC155M520DGR | Silicon振蕩器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
| 531EC156M250DGR | Silicon振蕩器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
| 531FC155M520DGR | Silicon振蕩器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
| 531FC156M250DGR | Silicon振蕩器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
| 530AC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 3.3V | ±7ppm |
| 530BC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 3.3V | ±7ppm |
| 530EC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 2.5V | ±7ppm |
| 530FC187M500DGR | Silicon振蕩器 | Si530 | 187.5MHz | 2.5V | ±7ppm |
| 531AC187M500DGR | Silicon振蕩器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
| 531BC187M500DGR | Silicon振蕩器 | Si531 | 187.5MHz | 3.3V | ±7ppm |
| 531EC187M500DGR | Silicon振蕩器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
| 531FC187M500DGR | Silicon振蕩器 | Si531 | 187.5MHz | 2.5V | ±7ppm |
| 530AC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
| 530AC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 3.3V | ±7ppm |
| 530AC200M000DGR | Silicon振蕩器 | Si530 | 200MHz | 3.3V | ±7ppm |
| 530BC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
| 530BC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 3.3V | ±7ppm |
| 530BC200M000DGR | Silicon振蕩器 | Si530 | 200MHz | 3.3V | ±7ppm |
| 530EC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 2.5V | ±7ppm |
| 530EC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 2.5V | ±7ppm |
| 530EC200M000DGR | Silicon振蕩器 | Si530 | 200MHz | 2.5V | ±7ppm |
| 530FC000110DGR | Silicon振蕩器 | Si530 | 148.35165MHz | 2.5V | ±7ppm |
| 530FC148M500DGR | Silicon振蕩器 | Si530 | 148.5MHz | 2.5V | ±7ppm |
| 531AC000110DGR | Silicon振蕩器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 531AC148M500DGR | Silicon振蕩器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 531AC200M000DGR | Silicon振蕩器 | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC000110DGR | Silicon振蕩器 | Si531 | 148.35165MHz | 3.3V | ±7ppm |
| 531BC148M500DGR | Silicon振蕩器 | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 531BC200M000DGR | Silicon振蕩器 | Si531 | 200MHz | 3.3V | ±7ppm |
| 531EC000110DGR | Silicon振蕩器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
| 531EC148M500DGR | Silicon振蕩器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
| 531EC200M000DGR | Silicon振蕩器 | Si531 | 200MHz | 2.5V | ±7ppm |
| 531FC000110DGR | Silicon振蕩器 | Si531 | 148.35165MHz | 2.5V | ±7ppm |
| 531FC148M500DGR | Silicon振蕩器 | Si531 | 148.5MHz | 2.5V | ±7ppm |
| 531FC200M000DGR | Silicon振蕩器 | Si531 | 200MHz | 2.5V | ±7ppm |
| 550AE100M000DGR | Silicon振蕩器 | Si550 | 100MHz | 3.3V | ±20ppm |
| 530BC130M250DG | Silicon振蕩器 | Si530 | 130.25MHz | 3.3V | ±7ppm |
| 550AE100M000DG | Silicon振蕩器 | Si550 | 100MHz | 3.3V | ±20ppm |
| 530BC154M000DG | Silicon振蕩器 | Si530 | 154MHz | 3.3V | ±7ppm |
| 530AC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530BC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530EC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 530FC312M500DGR | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 531AC312M500DGR | Silicon振蕩器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 531BC312M500DGR | Silicon振蕩器 | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 531EC312M500DGR | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 531FC312M500DGR | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 530AC250M000DGR | Silicon晶振 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530AC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 530AC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 530BC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530BC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 530BC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 530EC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530EC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
| 530EC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 530FC250M000DGR | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530FC311M040DGR | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
| 530FC622M080DGR | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 531AC250M000DGR | Silicon振蕩器 | Si531 | 250MHz | 3.3V | ±7ppm |
| 531AC311M040DGR | Silicon振蕩器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
| 531AC622M080DGR | Silicon振蕩器 | Si531 | 622.08MHz | 3.3V | ±7ppm |
| 531BC250M000DGR | Silicon振蕩器 | Si531 | 250MHz | 3.3V | ±7ppm |
NKG有源晶振,SCH3高速網絡晶振,SCH36B100.000MTS-EXT,7050mm,NKG振蕩器,石英晶體振蕩器,六腳有源振蕩器,OSC晶振,有源貼片晶振,有源晶體振蕩器,100MHZ有源晶振,7050mm微型晶振,尺寸7.0×5.0mm,頻率100MHZ,電壓3.3V,輸出LVCMOS,低抖動晶振,低相位晶振,低相噪晶振,低老化晶振,無線局域網晶振,高速網絡晶振.
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